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| SEMICONDUCTOR RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) December 1995 Features * 45A, 60V * rDS(ON) = 0.028 * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * +175oC Operating Temperature Description The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFG45N06 RFP45N06 RF1S45N06 RF1S45N06SM JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG45N06 RFP45N06 F1S45N06 F1S45N06 DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A. Formerly developmental type TA49028. JEDEC TO-263AB M A Symbol G D A A DRAIN (FLANGE) GATE SOURCE S Absolute Maximum Ratings TC = +25oC RFG45N06, RFP45N06 RF1S45N06, RF1S45N06SM 60 60 20 45 Refer to Peak Current Curve Refer to UIS Curve 125 131 0.877 -55 to +175 UNITS V V V A Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IAM Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ A W W/oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright (c) Harris Corporation 1995 File Number 3574.2 3-33 Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Electrical Specifications PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current TC = +25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = 60V, VGS = 0V VGS = 20V ID = 45A, VGS = 10V VDD = 30V, ID = 45A RL = 0.667, VGS = +10V RGS = 3.6 TC = +25oC TC = +150oC MIN 60 2 VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDS = 25V, VGS = 0V f = 1MHz VDD = 48V, ID = 45A, RL = 1.07 TYP 12 74 37 16 125 67 3.7 2050 600 200 MAX 4 1 50 100 0.028 120 80 150 80 4.5 1.14 80 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Gate-Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) tON tD(ON) tR tD(OFF) tF tOFF QG(TOT) QG(10) QG(TH) CISS COSS CRSS RJC RJA Source-Drain Diode Specifications PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD tRR TEST CONDITIONS ISD = 45A ISD = 45A, dISD/dt = 100A/s MIN TYP MAX 1.5 125 UNITS V ns 3-34 RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Typical Performance Curves 400 TC = +25oC 10 ID , DRAIN CURRENT (A) 100 100s 1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 10 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 100 10ms 100ms DC ZJC, NORMALIZED THERMAL RESPONSE 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-2 10-1 100 101 PDM VDSS MAX = 60V SINGLE PULSE 0.01 -5 10-4 10-3 10 t, RECTANGULAR PULSE DURATION (s) FIGURE 1. SAFE- OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 50 IDM , PEAK CURRENT CAPABILITY (A) 103 TC = +25oC FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: VGS = 20V I=I 175 - T C 25 ----------------------- 150 ID , DRAIN CURRENT (A) 40 30 20 VGS = 10V 102 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 40 10-3 10-2 10-1 100 101 102 t, PULSE WIDTH (ms) 103 104 10 0 25 50 75 100 125 (oC) 150 175 TC , CASE TEMPERATURE FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY ID(ON) , ON STATE DRAIN CURRENT (A) 125 VGS = 10V ID , DRAIN CURRENT (A) 100 PULSE DURATION = 250s, TC = +25oC VGS = 8V VGS = 7V 125 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX -55oC VDD = 15V +25oC 100 +175oC 75 75 50 VGS = 6V VGS = 5V VGS = 4.5V 50 25 25 0 0.0 1.5 3.0 4.5 6.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 7.5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 3-35 RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Typical Performance Curves rDS(ON), NORMALIZED ON RESISTANCE (Continued) 2.5 PULSE DURATION = 250s, VGS = 10V, ID = 45A VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE 2.0 VGS = VDS, ID = 250A 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) 0.0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE ID = 250A FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0.0 BVDSS, NORMALIZED DRAIN-TO-SOURCE 2.0 BREAKDOWN VOLTAGE 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 (oC) 160 200 TJ, JUNCTION TEMPERATURE 0 25 50 75 100 125 (oC) 150 175 TC , CASE TEMPERATURE FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE VGS = 0V, f = 1MHz FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE 60 VDS, DRAIN SOURCE VOLTAGE (V) VDD = BVDSS 45 VDD = BVDSS 7.5 10 VGS, GATE-SOURCE VOLTAGE (V) 4000 C, CAPACITANCE (pF) 3000 CISS 2000 COSS 1000 CRSS 0 0 5 10 15 20 25 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 30 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 5.0 15 2.5 RL = 1.33 IG(REF) = 1.5mA VGS = 10V 0 20 0 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTE AN7254 AND AN7260 3-36 RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Typical Performance Curves 300 IAS, AVALANCHE CURRENT (A) (Continued) 100 STARTING TJ = +25oC 10 STARTING TJ = +150oC If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms BVDSS tP IAS VDS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS VGS RG VDS L + VDD DUT 0V tAV tP IL 0.01 FIGURE 14. UNCLAMPED ENERGY WAVEFORMS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT tON tD(ON) tR VDS 90% tOFF tD(OFF) tF 90% VDD RL VDS VGS 10% 10% 0V 90% RGS DUT VGS 10% 50% PULSE WIDTH 50% FIGURE 16. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT 3-37 RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Temperature Compensated PSPICE Model for the RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM .SUBCKT RFP45N06 2 1 3 REV 1/18/93 *NOM TEMP = +25oC CA 12 8 3.49E-9 CB 15 14 3.8E-9 CIN 6 8 2E-9 DBODY 7 5 DBDMOD DBREAK 5 11DBKMOD DPLCAP 10 5 DPLCAPMOD GATE ESG 5 10 + EVTO + 9 LGATE 20 RGATE 18 8 6 8 DPLCAP 16 RDRAIN DBREAK DRAIN 2 LDRAIN 1 VTO + MOS2 21 MOS1 11 17 EBREAK 18 RSOURCE + DBODY - EBREAK 11 7 17 18 66.5 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1E-9 LGATE 1 9 5.65E-9 LSOURCE 3 7 4.13E-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 3.58E-3 RGATE 9 20 0.681 RIN 6 8 1E9 RSOURCE 8 7 RDSMOD 13.6E-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.92 6 RIN CIN 8 7 LSOURCE 3 SOURCE 18 RVTO S1A 12 13 8 S1B CA + EGS 6 -8 S2A 14 13 S2B 13 CB 14 + 5 EDS 8 IT 15 17 RBREAK 19 VBAT + - - .MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8) .MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5) .MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10) .MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U) .MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7) .MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5) .MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6) .MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7) .MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5) .MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2) .MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. 3-38 |
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